The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2009

Filed:

Jun. 29, 2007
Applicants:

Sung-ho Eun, Ansan-si, KR;

Jae-hee OH, Seongnam-si, KR;

Jae-hyun Park, Yongin-si, KR;

Jung-in Kim, Seoul, KR;

Seung-pil Ko, Suwon-si, KR;

Yong-tae OH, Seoul, KR;

Inventors:

Sung-Ho Eun, Ansan-si, KR;

Jae-Hee Oh, Seongnam-si, KR;

Jae-Hyun Park, Yongin-si, KR;

Jung-In Kim, Seoul, KR;

Seung-Pil Ko, Suwon-si, KR;

Yong-Tae Oh, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a semiconductor device includes forming a conductive layer on a semiconductor substrate, forming an insulating layer on the conductive layer, forming a word line and isolation trenches by patterning the insulating layer and the conductive layer, forming an isolation layer that fills the isolation trenches, forming a cell contact hole in the insulating layer such that the cell contact hole is self-aligned with the word line and exposes the word line, and forming a cell diode in the cell contact hole.


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