The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Dec. 28, 2005
IN Gyun Jeon, Gyeonggi-do, KR;
In Gyun Jeon, Gyeonggi-do, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A CMOS image sensor and a method for fabricating the same are disclosed, in which transfer characteristics are improved. The method includes forming a photodiode region and a second conductive type ion region on a surface of a first conductive type substrate by implanting a second conductive type impurity ion into an entire surface of the substrate where a transistor is to be formed, forming a second conductive type lightly doped ion region in the substrate corresponding to the photodiode region by lightly implanting a second conductive type impurity ion only in an area where the photodiode region is opened, and diffusing the second conductive type lightly doped ion region into the second conductive type ion region by a thermal process.