The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Jan. 04, 2007
Suk-ho Yoon, Seoul, KR;
Cheol-soo Sone, Anyang-si, KR;
Jeong-wook Lee, Seongnam-si, KR;
Joo-sung Kim, Yongin-si, KR;
Suk-ho Yoon, Seoul, KR;
Cheol-soo Sone, Anyang-si, KR;
Jeong-wook Lee, Seongnam-si, KR;
Joo-sung Kim, Yongin-si, KR;
Samsung Electro-Mechanics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.