The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Oct. 21, 2004
Taiji Ema, Kawasaki, JP;
Hideyuki Kojima, Kawasaki, JP;
Toru Anezaki, Kawasaki, JP;
Shinichi Nakagawa, Kawasaki, JP;
Taiji Ema, Kawasaki, JP;
Hideyuki Kojima, Kawasaki, JP;
Toru Anezaki, Kawasaki, JP;
Shinichi Nakagawa, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
The semiconductor group comprises a first semiconductor device including a first design macro and a nonvolatile memory, and a second semiconductor device including a second design macro having identity with the first design macro and including no nonvolatile memory. The first design macro includes a first active region and a first device isolation region formed on a first semiconductor substrate. The second design macro includes a second active region and a second device isolation region formed on a second semiconductor substrate. A curvature radius of an upper end of the first active region in a cross section is larger than a curvature radius of an upper end of the second active region in a cross section. A difference in height between a surface of the first active region and a surface of the first device isolation region is larger than a difference in height between a surface of the second active region and a surface of the device isolation region.