The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Jul. 31, 2007
Toru Takayama, Nara, JP;
Tomoya Satoh, Osaka, JP;
Koichi Hayakawa, Okayama, JP;
Isao Kidoguchi, Hyogo, JP;
Toru Takayama, Nara, JP;
Tomoya Satoh, Osaka, JP;
Koichi Hayakawa, Okayama, JP;
Isao Kidoguchi, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor laser device includes a red-light-emission portion and an infrared-light-emission portion on a single substrate. The red-light-emission portion has a structure in which an AlGaInP-based active layer is sandwiched by a first cladding layer of a first conductivity type having a striped portion and a second cladding layer of a second conductivity type. The infrared-light-emission portion has a structure in which an AlGaAs-based active layer is sandwiched by a third cladding layer of the first conductivity type having a striped portion and a fourth cladding layer of the second conductivity type. The first, second, third, and fourth cladding layers are all made of an AlGaInP-based material. When in these layers, the Al:Ga contents are represented by X-X, X-X, X-X, and X-X, respectively, X≧Xand X≧Xare satisfied.