The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Oct. 26, 2005
Applicants:
Yoshihiko Hanamaki, Tokyo, JP;
Kenichi Ono, Tokyo, JP;
Inventors:
Yoshihiko Hanamaki, Tokyo, JP;
Kenichi Ono, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 3/04 (2006.01); H01S 3/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a semiconductor laser, a n-type AlGaInP clad layer is formed on a n-type GaAs substrate and an active layer having an emission wavelength of 600 to 850 nm is formed on the n-type AlGaInP clad layer. A p-type AlGaInP clad layer is formed on the active layer and a p-type AlGaAs contact layer in which the Al composition is controlled so that the p-type AlGaAs contact layer has an optical bandgap larger than that of the active layer is formed on the p-type AlGaInP clad layer. A p-type GaAs cap layer is formed on the p-type AlGaAs contact layer.