The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2009

Filed:

Oct. 14, 2005
Applicants:

Kwang Hee Lee, Suwon-si, KR;

Won Jae Joo, Hwaseong-si, KR;

Jin Heong Yim, Suwon-si, KR;

Yoon Sok Kang, Seongnam-si, KR;

Inventors:

Kwang Hee Lee, Suwon-si, KR;

Won Jae Joo, Hwaseong-si, KR;

Jin Heong Yim, Suwon-si, KR;

Yoon Sok Kang, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 23/58 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device of the current invention includes a memory layer having nanochannels sandwiched between an upper electrode and a lower electrode, in which the memory layer is made of an organic-inorganic complex for use in formation of nanopores, and has metal nanoparticles or metal ions fed into the nanopores. Therefore, the memory device has excellent processability, high reproducibility, and uniform performance.


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