The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Jan. 28, 2008
Hiroshi Ikeda, Tokyo, JP;
Takeshi Yokoyama, Tokyo, JP;
Hiroshi Ikeda, Tokyo, JP;
Takeshi Yokoyama, Tokyo, JP;
TDK Corporation, Tokyo, JP;
Abstract
Detection of failure mode peculiar to a high-electron mobility transistor is available. A control circuit controls a gate voltage switching portion so that the gate voltage applied to a transistor may become a given checking voltage. The checking voltage may be set to a pinch-off-voltage of the transistor, for example. The control circuit detects a current value of the drain current flown when the checking voltage is applied, thereby detecting a failure of the transistor based on the current value. According to the present invention, since failure detection is made on the basis of the drain current value flown when the checking voltage set up apart from an operating voltage is applied as the gate voltage, failure mode which is peculiar to the high electron mobility transistor and which is hardly detectable in an ordinary operating state becomes detectable.