The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2009

Filed:

Sep. 30, 2005
Applicants:

Junli Wang, Kanagawa, JP;

Toyotaka Kataoka, Kanagawa, JP;

Masaki Saito, Tokyo, JP;

Inventors:

Junli Wang, Kanagawa, JP;

Toyotaka Kataoka, Kanagawa, JP;

Masaki Saito, Tokyo, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device including an NMOS region and a PMOS region in the same substrate, wherein the semiconductor device includes a strained Si layer which is provided on the substrate in the NMOS region and in which the surface has a plane orientation different from that of the substrate, and a strained SiGe layer which is provided on the substrate in the PMOS region and which is composed of a stained layer having the same plane orientation as that of the surface of the substrate; and a method of manufacturing the same.


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