The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Jun. 15, 2005
Matthew Francis O'keefe, Aycliffe Village, GB;
Michael Charles Clausen, Heighington Village, GB;
Richard Alun Davies, Northampton, GB;
Robert Grey, Newton Aycliffe, GB;
Matthew Francis O'Keefe, Aycliffe Village, GB;
Michael Charles Clausen, Heighington Village, GB;
Richard Alun Davies, Northampton, GB;
Robert Grey, Newton Aycliffe, GB;
Filtronic PLC, West Yorkshire, GB;
Abstract
A III-V field effect transistor includes a semiconductor channel layer having an electrically conducting channel and an ohmic contact layer on the semiconductor channel layer. The ohmic contact layer has a recess structure disposed therethrough to the semiconductor channel layer. The bottom of the ohmic contact layer includes an etch stop layer including Aluminum and Phosphorous and defining the shape of the recess at its junction with the semiconductor channel layer.