The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Jan. 23, 2004
Applicant:
John Twynam, Yamatokooriyama, JP;
Inventor:
John Twynam, Yamatokooriyama, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
Abstract
On a substrate of a GaN FET, an undoped AlN layer, a GaN delta doped layer, an undoped GaN layer, and an undoped AlGaN layer are formed in sequence. Arranged on the undoped AlGaN layer are a Ti/Al/Pt/Au source ohmic electrode, a Pt/Au gate Schottky electrode, and a Ti/Al/Pt/Au drain ohmic electrode. Parallel conduction and gate leak are reduced or eliminated by the GaN delta doped layer.