The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Nov. 25, 2003
Kenji Fukuda, Tsukuba, JP;
Ryoji Kosugi, Tsukuba, JP;
Junji Senzaki, Tsukuba, JP;
Shinsuke Harada, Tsukuba, JP;
Kenji Fukuda, Tsukuba, JP;
Ryoji Kosugi, Tsukuba, JP;
Junji Senzaki, Tsukuba, JP;
Shinsuke Harada, Tsukuba, JP;
Abstract
In a semiconductor device that uses a silicon carbide semiconductor substrate having p type, n type impurity semiconductor regions formed by ion implantation, the electrical characteristics of the end semiconductor device can be improved by decreasing the roughness of the silicon carbide semiconductor substrate surface. The semiconductor device of this invention is a Schottky barrier diode or a p-n type diode comprising at least one of a p type semiconductor region and n type semiconductor region selectively formed in a silicon carbide semiconductor region having an outermost surface layer surface that is a (000-1) surface or a surface inclined at an angle to the (000-1) surface, and a metal electrode formed on the outermost surface layer surface, that controls a direction in which electric current flows in a direction perpendicular to the outermost surface layer surface from application of a voltage to the metal electrode.