The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2009

Filed:

Jun. 13, 2005
Applicants:

Kazushige Ito, Chuo-ku, JP;

Daisuke Iwanaga, Chuo-ku, JP;

Akira Sato, Chuo-ku, JP;

Inventors:

Kazushige Ito, Chuo-ku, JP;

Daisuke Iwanaga, Chuo-ku, JP;

Akira Sato, Chuo-ku, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/468 (2006.01);
U.S. Cl.
CPC ...
Abstract

A ceramic electronic device having a dielectric layer, wherein the dielectric layer includes a main component containing a (Ba, Ca (Ti, Zr)Obased material and a subcomponent containing an oxide of Si; and a content of the Si oxide is 0 to 0.4 wt % (note that 0 is not included) with respect to the entire dielectric layer; and preferably the dielectric layer has a segregation phase; and the segregation phase contains an oxide of Si and substantially not containing an oxide of Li; by which it is possible to provide a ceramic electronic device, such as a multilayer ceramic capacitor, having a low IR defect rate (initial insulation resistance defect rate), excellent high temperature load lifetime and high reliability.


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