The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Jun. 13, 2006
Atsuko Kawasaki, Yokohama, JP;
Takeshi Hoshi, Yokohama, JP;
Masahiro Kiyotoshi, Sagamihara, JP;
Takatoshi Ono, Odawara, JP;
Yoshihiro Ogawa, Yokohama, JP;
Kaori Umezawa, Kamakura, JP;
Atsuko Kawasaki, Yokohama, JP;
Takeshi Hoshi, Yokohama, JP;
Masahiro Kiyotoshi, Sagamihara, JP;
Takatoshi Ono, Odawara, JP;
Yoshihiro Ogawa, Yokohama, JP;
Kaori Umezawa, Kamakura, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.