The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Sep. 11, 2003
Applicants:
Takayuki Shimamune, Tokyo, JP;
Tadashi Yoshikawa, Kanagawa, JP;
Hiroshi Fukuoka, Tokyo, JP;
Nobuo Ishizawa, Tokyo, JP;
Inventors:
Takayuki Shimamune, Tokyo, JP;
Tadashi Yoshikawa, Kanagawa, JP;
Hiroshi Fukuoka, Tokyo, JP;
Nobuo Ishizawa, Tokyo, JP;
Assignee:
Kinotech Solar Energy Corporation, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3141 (2006.01);
U.S. Cl.
CPC ...
Abstract
When high purity silicon is produced through a gas-phase reaction between silicon tetra-chloride and zinc in a reaction furnace, the produce silicon is obtained as block or molten state. after the reaction in which the silicon is not in contact with air and reaction temperature is maintained at melting point of the silicon or less.