The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Aug. 07, 2007
Shunpei Yamazaki, Setagaya, JP;
Osama Nakamura, Atsugi, JP;
Masayuki Kajiwara, Atsugi, JP;
Junichi Koezuka, Atsugi, JP;
Koji Dairiki, Atsugi, JP;
Toru Mitsuki, Atsugi, JP;
Toru Takayama, Atsugi, JP;
Hideto Ohnuma, Atsugi, JP;
Taketomi Asami, Atsugi, JP;
Mitsuhiro Ichijo, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Osama Nakamura, Atsugi, JP;
Masayuki Kajiwara, Atsugi, JP;
Junichi Koezuka, Atsugi, JP;
Koji Dairiki, Atsugi, JP;
Toru Mitsuki, Atsugi, JP;
Toru Takayama, Atsugi, JP;
Hideto Ohnuma, Atsugi, JP;
Taketomi Asami, Atsugi, JP;
Mitsuhiro Ichijo, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of manufacturing a semiconductor device. With the present invention, a barrier layer, a second semiconductor film, and a third semiconductor film containing a noble (rare) gas element are formed on a first semiconductor film having a crystalline structure. Gettering is performed and a metallic element contained in the first semiconductor film passes through the barrier layer and the second semiconductor film by a heat treatment process, and moves to the third semiconductor film. The second semiconductor film and the third semiconductor film are then removed, with the barrier layer used as an etching stopper.