The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Dec. 10, 2004
Sang-tae Ahn, Kyoungki-do, KR;
Dong-sun Sheen, Kyoungki-do, KR;
Seok-pyo Song, Kyoungki-do, KR;
Jong-han Shin, Kyoungki-do, KR;
Sang-Tae Ahn, Kyoungki-do, KR;
Dong-Sun Sheen, Kyoungki-do, KR;
Seok-Pyo Song, Kyoungki-do, KR;
Jong-Han Shin, Kyoungki-do, KR;
Hynix Semiconductor, Inc., Kyoungki-Do, KR;
Abstract
Disclosed is a semiconductor device with a flowable insulation layer formed on a capacitor and a method for fabricating the same. Particularly, the semiconductor device includes: a capacitor formed on a predetermined portion of a substrate; an insulation layer formed by stacking a flowable insulation layer and an undoped silicate glass layer on a resulting substrate structure including the substrate and the capacitor; and a metal interconnection line formed on the insulation layer. The method includes the steps of: forming a capacitor on a predetermined portion of a substrate; forming an insulation layer by stacking a flowable insulation layer and an undoped silicate glass layer on a resulting substrate structure including the substrate and the capacitor; and forming a metal interconnection line on the insulation layer.