The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Jun. 26, 2006
Han-seob Cha, Chungcheongbuk-do, KR;
Han-Seob Cha, Chungcheongbuk-do, KR;
MagnaChip Semiconductor Ltd., Chungcheongbuk-do, KR;
Abstract
A method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor includes performing an ion implantation process onto a photodiode region in a first conductivity type semiconductor layer to form a second conductivity type first impurity region, and performing an annealing process in a gas atmosphere including first conductivity type impurity atoms to form a first conductivity type second impurity region underneath a surface of the first conductivity type semiconductor layer in the second conductivity type first impurity region, wherein the first conductivity type second impurity region is doped with the diffused first conductivity impurity atoms.