The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Jun. 06, 2006
Han Young Yu, Daejeon, KR;
IN Bok Baek, Cheongju-si, KR;
Chang Geun Ahn, Daejeon, KR;
Ki Ju Im, Daejeon, KR;
Jong Heon Yang, Daejeon, KR;
Ung Hwan Pi, Daejeon, KR;
Min Ki Ryu, Seoul, KR;
Chan Woo Park, Daejeon, KR;
Sung Yool Choi, Daejeon, KR;
Seong Jae Lee, Daejeon, KR;
Han Young Yu, Daejeon, KR;
In Bok Baek, Cheongju-si, KR;
Chang Geun Ahn, Daejeon, KR;
Ki Ju Im, Daejeon, KR;
Jong Heon Yang, Daejeon, KR;
Ung Hwan Pi, Daejeon, KR;
Min Ki Ryu, Seoul, KR;
Chan Woo Park, Daejeon, KR;
Sung Yool Choi, Daejeon, KR;
Seong Jae Lee, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.