The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2009

Filed:

Jun. 21, 2005
Applicants:

Gaofeng Wang, San Jose, CA (US);

Chih-chang Chen, Cupertino, CA (US);

Yahong Yao, Palo Alto, CA (US);

Liji Huang, San Jose, CA (US);

Inventors:

Gaofeng Wang, San Jose, CA (US);

Chih-Chang Chen, Cupertino, CA (US);

Yahong Yao, Palo Alto, CA (US);

Liji Huang, San Jose, CA (US);

Assignee:

Siargo, Ltd., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01F 1/68 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation <100>. This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed. Before backside etching the bulk silicon, rectangular openings are formed on the dielectric thin-film layers by applying a plasma etching to separate the area of heater and sensing elements from the rest of the membrane. This mass flow sensor is operated with two sets of circuits, a first circuit for measuring a flow rate in a first range of flow rates and a second circuit for measuring a flow rate in a second range of flow rates, to significantly increase range of flow rate measurements, while maintains a high degree of measurement accuracy.


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