The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2009
Filed:
Jul. 27, 2005
Hidechika Kawazoe, Kitakatsuragi, JP;
Yukio Tamai, Tsuchiura, JP;
Atsushi Shimaoka, Kashihara, JP;
Hidenori Morimoto, Kashihara, JP;
Nobuyoshi Awaya, Fukuyama, JP;
Hidechika Kawazoe, Kitakatsuragi, JP;
Yukio Tamai, Tsuchiura, JP;
Atsushi Shimaoka, Kashihara, JP;
Hidenori Morimoto, Kashihara, JP;
Nobuyoshi Awaya, Fukuyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A nonvolatile semiconductor memory device according to the present invention comprises a memory cell selecting circuit for selecting the memory cell from the memory cell array in units of row, column or memory cell; a read voltage application circuit for applying a read voltage to the variable resistor element of the selected memory cells selected by the memory cell selecting circuit; and a read circuit for detecting the amount of the read current flowing in accordance with the resistance value of the variable resistor element with respect to the memory cell to be read of the selected memory cells and reading the information stored in the memory cell to be read; and the read voltage application circuit applies a dummy read voltage having reversed polarity from the read voltage to the variable resistor element of the selected memory cell.