The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2009

Filed:

May. 18, 2005
Applicants:

Yuichi Akage, Isehara, JP;

Hideki Fukano, Isehara, JP;

Takayuki Yamanaka, Isehara, JP;

Tadashi Saitoh, Suita, JP;

Inventors:

Yuichi Akage, Isehara, JP;

Hideki Fukano, Isehara, JP;

Takayuki Yamanaka, Isehara, JP;

Tadashi Saitoh, Suita, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electrode pad on a semiconductor substrate having a reduced capacitance of an electrode pad portion and allowing control of a characteristic impedance for a practical electrode pad size is provided. A mesa-stripe type optical waveguide formed by stacking an n-InP clad layeran i layerand a p-InP clad layer and p type contact layeris formed on an n-InP substratean insulating material filmhaving a mesa-shaped deposited portionnear the optical waveguide is formed on the n-InP substratean electrodeand wiring electrodesandfor supplying an electrical signal to the optical waveguide are placed on the optical waveguide and the insulating material filmrespectively, and an electrode padis placed on the top surface of the mesa-shaped deposited portionso that the n-InP substrateand the electrode padhave a predetermined interval t(about 17 to 29 μm)


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