The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2009
Filed:
Jan. 12, 2007
Na-young Kim, Seoul, KR;
Chang-woo OH, Suwon-si, KR;
Sung-hwan Kim, Suwon-si, KR;
Yong-lack Choi, Seoul, KR;
Na-Young Kim, Seoul, KR;
Chang-Woo Oh, Suwon-si, KR;
Sung-Hwan Kim, Suwon-si, KR;
Yong-Lack Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A example embodiment may provide a memory device that may include an active pattern on a semiconductor substrate, a first charge trapping layer pattern on the active pattern, a first gate electrode on the first charge trapping layer pattern, a second charge trapping layer pattern on a sidewall of the active pattern in a first direction, a second gate electrode on the second charge trapping layer pattern in the first direction, and/or a source/drain region in the active pattern. The memory device may have improved integration by forming a plurality of charge trapping layer patterns on the same active pattern.