The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2009

Filed:

Mar. 29, 2006
Applicants:

Hisashi Watanobe, Mie, JP;

Tooru Hara, Mie, JP;

Inventors:

Hisashi Watanobe, Mie, JP;

Tooru Hara, Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a semiconductor substrate divided into a memory cell region in which a memory cell is formed and a peripheral circuit region in which a peripheral circuit for driving the memory cell is formed, a plurality of conductive layers provided in each region so as to interpose an interlayer insulating film, a plurality of connection wiring layers formed in a plurality of holes which are formed in the interlayer insulating film so as to extend through the conductive layers of each region, the connection wiring layers electrically connecting the conductive layers, and a spacer insulating film functioning as a spacer which is formed on inner sidewall surfaces of the holes and outer sidewall surfaces of the connection wiring layers in each region.


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