The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2009
Filed:
Jun. 14, 2006
Dong-hyun Kim, Suwon-Si, KR;
Du-heon Song, Yongin-Si, KR;
Sang-hyun Lee, Seoul, KR;
Hyeoung-won Seo, Yongin-Si, KR;
Dae-joong Won, Seoul, KR;
Dong-Hyun Kim, Suwon-Si, KR;
Du-Heon Song, Yongin-Si, KR;
Sang-Hyun Lee, Seoul, KR;
Hyeoung-Won Seo, Yongin-Si, KR;
Dae-Joong Won, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
For fabricating a field effect transistor, an extra-doped channel region is formed below a surface of a semiconductor substrate. An opening is formed in the semiconductor substrate into the extra-doped channel region. A gate insulator is formed at walls of the opening such that the extra-doped channel region abuts the gate insulator at a bottom portion of the opening. The opening is filled with a gate electrode. Such an extra-doped channel region prevents undesired body effect in the field effect transistor.