The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2009
Filed:
Jul. 13, 2006
Applicant:
Toshiki Hara, Suwa, JP;
Inventor:
Toshiki Hara, Suwa, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device, comprises: a transistor having structured to include a gate electrode formed on a semiconductor layer on a semiconductor substrate via a gate insulating film, and a source layer and a drain layer formed on the semiconductor layer sandwiching the gate electrode; a hollow portion existing between the source layer and the semiconductor substrate, and between the drain layer and the semiconductor substrate, respectively; and the hollow portion in absence between the semiconductor layer under the gate electrode and the semiconductor substrate.