The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2009
Filed:
Nov. 01, 2004
Applicant:
Patrice Gamand, Douvres la Delivrande, FR;
Inventor:
Patrice Gamand, Douvres la Delivrande, FR;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81B 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates to a method of manufacturing a resonator within a semiconductor device, said semiconductor device comprising a substrate, wherein said method comprises the steps of: etching a hole in the substrate, creating a first doping zone (Z-DIFF) for defining a first electrode, partitioning said first electrode into two electrodes, applying a delimited oxide deposit inside and around the hole, defining a second doping zone (Z-DIFF) totally covering the hole, removing the oxide deposit in order to define an element forming the resonator able to vibrate between the two electrodes.