The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2009
Filed:
Oct. 31, 2005
Sung-kwon Lee, Kyoungki-do, KR;
Gyu-dong Park, Kyoungki-do, KR;
Sung-Kwon Lee, Kyoungki-do, KR;
Gyu-Dong Park, Kyoungki-do, KR;
Hynix Semiconductor Inc., , KR;
Abstract
A method for fabricating a semiconductor device is provided. The method includes: preparing a substrate defined as active regions and inactive regions and provided with a plurality of conductive patterns; forming a buffer layer over the plurality of conductive patterns; forming an organic material having fluidity better than that of a photoresist layer on the buffer layer; flowing the organic material between the conductive patterns through a thermal treatment process, thereby filling a portion of each gap between the conductive patterns; forming the photoresist layer over the organic material and the buffer layer; forming a plurality of photoresist patterns opening the active regions through a photo-exposure process and a developing process; and performing an ion-implantation process using the plurality of photoresist patterns, thereby forming a plurality of junction regions in the active regions of the substrate.