The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2009
Filed:
Dec. 15, 2005
Applicants:
Jae Chang Jung, Seoul, KR;
Cheol Kyu Bok, Icheon-si, KR;
Chang Moon Lim, Icheon-si, KR;
Seung Chan Moon, Yongin-si, KR;
Inventors:
Jae Chang Jung, Seoul, KR;
Cheol Kyu Bok, Icheon-si, KR;
Chang Moon Lim, Icheon-si, KR;
Seung Chan Moon, Yongin-si, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); C08F 26/06 (2006.01); C08F 32/08 (2006.01);
U.S. Cl.
CPC ...
Abstract
A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure.