The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Mar. 29, 2005
Masahiro Murakawa, Tokyo, JP;
Keiichi Ito, Tokyo, JP;
Michiko Miura, Higashi-Hiroshima, JP;
Evolvable Systems Research Institute Inc., Tokyo, JP;
Abstract
A parameter adjusting device and a parameter adjusting method configured to adjust a great number of parameters used for a circuit design model of a semiconductor element such as a transistor within a short time. A parameter adjusting device adapts a circuit design model wherein a formula for analysis is derived based on a surface potential such as, for example, the HiSIM, as the circuit design model of a semiconductor element; defines a chromosome wherein a respective great number of parameters of the model are genes; and optimizes the parameter based on property measured data of a tested element, using a genetic algorithm. Parameter adjustment comprises a first step adjusting the parameters which determine the structure of the semiconductor element based on the property measured data of a long channel group; and a second step adjusting nonadjusted parameters based on the property measured data of various lengths of channels with reference to a result of the first step. Adjustment of the optimum parameters within a short time and with a high degree of accuracy, which was conventionally difficult, can be performed.