The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Jun. 15, 2005
Shiro Uchida, Miyagi, JP;
Tsuyoshi Tojo, Miyagi, JP;
Shiro Uchida, Miyagi, JP;
Tsuyoshi Tojo, Miyagi, JP;
Sony Corporation, Tokyo, JP;
Abstract
To provide a semiconductor light emitting device capable of improving an aspect ratio of a laser beam to make it close to a circular shape and a method of producing the same, a first conductive type first cladding layeran active layerand a second conductive type second cladding layerhaving a ridge-shaped portion RD as a current narrowing structure are stacked on a substratewherein the ridge-shaped portion includes a first ridge-shaped layeron the side close to said active layer and having a high bandgap and a second ridge-shaped layeron the side distant from the active layer and having a low bandgap, so that the semiconductor light emitting device is obtained. By using an epitaxial growth method, a first cladding layer, active layer and second conductive type second cladding layer are formed by being stacked on the substrate, a part of the second cladding layer is processed to be a ridge-shaped portion, and the second cladding layer is formed, so that the portion to be a ridge shape includes the first ridge-shaped layer and second ridge-shaped layer.