The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Jun. 09, 2005
Kimihiro Maemura, Suwa-Gun Hara, JP;
Satoru Kodaira, Chino, JP;
Hitoshi Kobayashi, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A nonvolatile memory device includes: a semiconductor layer of a first conductivity type in which a first region, a second region, and a third region are partitioned by an isolation insulating layer; a semiconductor section of a second conductivity type provided in the first region and functioning as a control gate; a semiconductor section of the first conductivity type provided in the second region; a semiconductor section of the second conductivity type provided in the third region; an insulating layer provided on the semiconductor layer in the first to third regions; a floating gate electrode provided on the insulating layer across the first to third regions; impurity regions of the first conductivity type provided on each side of the floating gate electrode in the first region; impurity regions of the second conductivity type provided on each side of the floating gate electrode in the second region and functioning as either a source region or a drain region; and impurity regions of the first conductivity type provided on each side of the floating gate electrode in the third region and functioning as either a source region or a drain region.