The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Jan. 09, 2007
Kun Yoo Ko, Hwaseong, KR;
Bang Won OH, Seongnam, KR;
Hun Joo Hahm, Seongnam, KR;
Je Won Kim, Suwon, KR;
Hyung Jin Park, Suwon, KR;
Seok Min Hwang, Suwon, KR;
Dong Woo Kim, Seoul, KR;
Kun Yoo Ko, Hwaseong, KR;
Bang Won Oh, Seongnam, KR;
Hun Joo Hahm, Seongnam, KR;
Je Won Kim, Suwon, KR;
Hyung Jin Park, Suwon, KR;
Seok Min Hwang, Suwon, KR;
Dong Woo Kim, Seoul, KR;
Samsung Electro-Mechanics Co., Ltd., Gyunggi-Do, KR;
Abstract
A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.