The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Nov. 14, 2006
Chuan-feng Liu, Hsinchu, TW;
Chuan-Feng Liu, Hsinchu, TW;
Prime View International Co., Ltd., Hsinchu, TW;
Abstract
A multi-channel thin film transistor structure including a first conducting layer, an insulating layer, a semiconductor layer and a second conducting layer is provided. The first conducting layer formed on a substrate includes a gate electrode. The insulating layer covers the first conducting layer. The semiconductor layer formed on the insulating layer includes a plurality of semiconductor islands located above the gate electrode. The second conducting layer formed on the insulating layer and on the semiconductor layer includes a source electrode and a drain electrode. Each one of the semiconductor islands is coupled electrically with the source electrode at one end and coupled electrically with the drain electrode at the other end.