The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Jun. 01, 2006
Katsujiro Tanzawa, Yokohama, JP;
Norihiko Tsuchiya, Tokyo, JP;
Junji Sugamoto, Yokosuka, JP;
Yukihiro Ushiku, Yokohama, JP;
Katsujiro Tanzawa, Yokohama, JP;
Norihiko Tsuchiya, Tokyo, JP;
Junji Sugamoto, Yokosuka, JP;
Yukihiro Ushiku, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of inspecting a semiconductor wafer, comprises removing a device structure film on the semiconductor wafer with a chemical solution to expose a crystal surface of the semiconductor wafer; coating a protected area, which is a part of the crystal surface of the semiconductor wafer, with a mask material for protecting the crystal surface of the semiconductor wafer; etching the semiconductor wafer selectively, thereby making a crystal defect in a non-protected area, which is a part of the crystal surface of the semiconductor wafer that is not coated with the mask material, appear after the crystal surface is coated with the mask material; removing the mask material after the selective etching; carrying out quantitative measurement of the protected area and the non-protected area using an optical defect inspection apparatus or a beam-type defect inspection apparatus; and calculating the number of crystal defects of the semiconductor wafer base on the result of the measurement.