The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Nov. 21, 2006
Byoung-ho Kwon, Suwon-si, KR;
Se-rah Yun, Suwon-si, KR;
Chang-ki Hong, Seongnam-si, KR;
Bo-un Yoon, Seoul, KR;
Jae-kwang Choi, Suwon-si, KR;
Joon-sang Park, Seoul, KR;
Byoung-Ho Kwon, Suwon-si, KR;
Se-Rah Yun, Suwon-si, KR;
Chang-Ki Hong, Seongnam-si, KR;
Bo-Un Yoon, Seoul, KR;
Jae-Kwang Choi, Suwon-si, KR;
Joon-Sang Park, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Mask patterns used for forming patterns or trenches may include first mask patterns, which may be formed by a typical photolithography process, and second mask patterns, which may be formed in a self-aligned manner between adjacent first mask patterns. A sacrificial layer may be deposited and planarized such that the tops of the first mask patterns and the second mask patterns have planar surfaces. After the planarization of the sacrificial layer, the remaining the sacrificial layer may be removed by an ashing process.