The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Jun. 07, 2007
Yun-seung Kang, Seoul, KR;
Jun Seo, Kyeonggi-do, KR;
Min-chul Chae, Gyeonggi-do, KR;
Jae-seung Hwang, Gyeonggi-do, KR;
Sung-un Kwon, Gyeonggi-do, KR;
Woo-jin Cho, Gyeonggi-do, KR;
Yun-Seung Kang, Seoul, KR;
Jun Seo, Kyeonggi-do, KR;
Min-Chul Chae, Gyeonggi-do, KR;
Jae-Seung Hwang, Gyeonggi-do, KR;
Sung-Un Kwon, Gyeonggi-do, KR;
Woo-Jin Cho, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Provided is a method of fabricating a semiconductor device having a contact hole with a high aspect-ratio. The method includes: sequentially forming a lower pattern and an upper layer on a semiconductor substrate; sequentially forming a lower mask layer and an upper mask layer on the upper layer; sequentially patterning the lower and upper mask layers to form a hole exposing a top surface of the upper layer on the lower pattern; using the upper mask layer as an etching mask to anisotropically etch the exposed top surface to form an upper contact hole exposing a top surface of the lower pattern; and using the lower mask layer as an etching mask to anisotropically etch the exposed lower pattern to form a lower contact hole in the lower pattern, the lower contact hole extending from the upper contact hole.