The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
May. 25, 2007
Applicants:
Keisuke Nakazawa, Tokyo, JP;
Koji Yamakawa, Tokyo, JP;
Katsuaki Natori, Yokohama, JP;
Soichi Yamazaki, Yokohama, JP;
Hiroshi Itokawa, Yokohama, JP;
Hiroyuki Kanaya, Yokohama, JP;
Inventors:
Keisuke Nakazawa, Tokyo, JP;
Koji Yamakawa, Tokyo, JP;
Katsuaki Natori, Yokohama, JP;
Soichi Yamazaki, Yokohama, JP;
Hiroshi Itokawa, Yokohama, JP;
Hiroyuki Kanaya, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device, including forming a capacitor above a semiconductor substrate, the capacitor including a dielectric film containing Pb, Zr, Ti and O. Forming the capacitor includes forming a crystallized film which contains Pb, Sr, Zr, Ti, Ru and O.