The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Jan. 03, 2008
Koichi Tachibana, Kawasaki, JP;
Chie Hongo, Yokohama, JP;
Shinya Nunoue, Ichikawa, JP;
Masaaki Onomura, Setagaya-ku, JP;
Koichi Tachibana, Kawasaki, JP;
Chie Hongo, Yokohama, JP;
Shinya Nunoue, Ichikawa, JP;
Masaaki Onomura, Setagaya-ku, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards <1-100> direction lying in a range of 0.12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards <11-20> direction lying in a range of 0.00 degree to 0.06 degree.