The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Feb. 17, 2004
Applicants:
Tingkai LI, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Bruce D. Ulrich, Beaverton, OR (US);
Inventors:
Tingkai Li, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Bruce D. Ulrich, Beaverton, OR (US);
Assignee:
Sharp Laboratories of America, Inc., Camas, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming depositing a ferroelectric thin film, such as PGO, by preparing a substrate with an upper surface of silicon, silicon oxide, or a high-k material, such as hafnium oxide, zirconium oxide, aluminum oxide, and lanthanum oxide, depositing an indium oxide film over the substrate, and then depositing the ferroelectric film using MOCVD.