The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Nov. 16, 2006
Applicant:
Jong Hyurk Park, Daegu-Shi, KR;
Inventor:
Jong Hyurk Park, Daegu-Shi, KR;
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/32 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a silicon nanodot thin film having uniform doping concentration without damage by placing a substrate on a stage within a chamber. The method further including depositing a matrix thin film based on the silicon by PECVD, while doping a light emitting material such as Erbium on the matrix thin film deposited by sputtering process at the same time. The silicon nanodot film obtained by the present invention has an improved light emitting characteristic in long distance communication frequency range of 1.54 μm as well as visible light range.