The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Dec. 14, 2005
Seiji Sarayama, Miyagi, JP;
Hisanori Yamane, Miyagi, JP;
Masahiko Shimada, Miyagi, JP;
Masafumi Kumano, Kanagawa, JP;
Hirokazu Iwata, Miyagi, JP;
Takashi Araki, Miyagi, JP;
Seiji Sarayama, Miyagi, JP;
Hisanori Yamane, Miyagi, JP;
Masahiko Shimada, Miyagi, JP;
Masafumi Kumano, Kanagawa, JP;
Hirokazu Iwata, Miyagi, JP;
Takashi Araki, Miyagi, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).