The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2009

Filed:

Feb. 21, 2006
Applicants:

Charles H. Joyner, Sunnyvale, CA (US);

Mark J. Missey, San Jose, CA (US);

Radhakrishnan L. Nagarajan, Cupertino, CA (US);

Fred A. Kish, Jr., Palo Alto, CA (US);

Inventors:

Charles H. Joyner, Sunnyvale, CA (US);

Mark J. Missey, San Jose, CA (US);

Radhakrishnan L. Nagarajan, Cupertino, CA (US);

Fred A. Kish, Jr., Palo Alto, CA (US);

Assignee:

Infinera Corporation, Sunnyvale, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photonic integrated circuit that includes a plurality of active and passive components on a substrate where one of the components is an optical combiner/decombiner having at least one free space coupler region and a plurality of longitudinal ridge waveguides each extending in the circuit from a first region of the waveguide and coupled at a second region of the waveguide at the free space coupler region. A first dielectric layer formed over the ridge waveguides and the free space coupler region. The first dielectric layer monotonically increases in cross-sectional thickness from the waveguide first region to the second region to reduce signal insertion losses in transitioning from the ridge waveguides to the free space coupler region. The first dielectric layer may be covered with a second passivation layer. The first dielectric layer may be SiO, SiNor SiONand the second passivation layer may be BCB, ZnS or ZnSe.


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