The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Oct. 23, 2007
Takeshi Kamikawa, Mihara, JP;
Yoshika Kaneko, Funabashi, JP;
Takeshi Kamikawa, Mihara, JP;
Yoshika Kaneko, Funabashi, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A nitride semiconductor light-emitting device includes a nitride semiconductor substrate of which at least part of a surface is formed from a nitride semiconductor and a nitride film semiconductor growth layer laid on the surface of the nitride semiconductor substrate. A carved region in the shape of a depressed portion may be formed on the surface of the nitride semiconductor substrate. The carved region may have an inverted tapered shape or a tapered shape in cross-section. Alternatively, or additionally, the nitride film semiconductor growth layer may include a gallium nitride film or an aluminum containing gallium nitride film where the nitride film semiconductor growth layer makes contact with the nitride semiconductor substrate. Alternatively, or additionally, the nitride film semiconductor growth layer may include a light-emitting portion formed at a location 20 μm or more away from the carved region.