The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Jun. 07, 2005
Akihito Matsumoto, Nagano, JP;
Toshiyuki Kamiya, Nagano, JP;
Akihito Matsumoto, Nagano, JP;
Toshiyuki Kamiya, Nagano, JP;
Seiko Epson Corporation, , JP;
Abstract
A capacitor section is formed with a lower electrode provided on a SiOlayer above an impurity layer provided in a substrate, a ferroelectric layer provided on the lower electrode, and an upper electrode provided on the ferroelectric layer. Further, the semiconductor device is equipped with a SiOlayer that electrically insulates the upper electrode from a wiring, a first contact hole in which a W plug is formed for electrically connecting the impurity layer and the lower electrode, and a second contact hole for electrically connecting the upper electrode and the wiring. The first contact hole and the second contact hole are opened at positions mutually deviated as viewed in a plan view of the capacitor section.