The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2009

Filed:

May. 24, 2004
Applicants:

Hans-martin Ritter, Nahe, DE;

Martin Lübbe, Hamburg, DE;

Jochen Wynants, Schenefeld, DE;

Inventors:

Hans-Martin Ritter, Nahe, DE;

Martin Lübbe, Hamburg, DE;

Jochen Wynants, Schenefeld, DE;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/095 (2006.01);
U.S. Cl.
CPC ...
Abstract

A monolithically integrated punch-through diode with a Schottky-like behavior. This is achieved as a Schottky-metal area () is deposited onto at least part of the first p-doped well's () surface. The Schottky-metal area () and the p-doped well () form the metal-semiconductor-transition of a Schottky-diode. The overvoltage protection of the inventive PT-diode is improved as the forward characteristic has a voltage drop that is less than 0.5V.


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