The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Aug. 27, 2004
Applicants:
Jae-eun Lim, Ichon-shi, KR;
Sun-hwan Hwang, Ichon-shi, KR;
Inventors:
Jae-Eun Lim, Ichon-shi, KR;
Sun-Hwan Hwang, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., , KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates to a semiconductor device with a device isolation structure and a method for fabricating the same. The semiconductor device includes: a substrate provided with a trench formed in the substrate; and at least one device isolation structure including an oxide layer formed on the trench, a nitride layer formed on the oxide layer disposed on sidewalls of the trench and a high density plasma oxide layer formed on the nitride layer to fill the trench.