The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
May. 24, 2005
Mrinal K. Das, Durham, NC (US);
Michael Laughner, Clayton, NC (US);
Mrinal K. Das, Durham, NC (US);
Michael Laughner, Clayton, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
Methods of forming silicon carbide power devices are provided. An nsilicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the nsilicon carbide layer. A buried region of psilicon carbide is provided on the p-type silicon carbide well region. An nregion of silicon carbide is provided on the buried region of psilicon carbide. A channel region of the power device is adjacent the buried region of psilicon carbide and the nregion of silicon carbide. An nregion is provided on the channel region and a portion of the nregion is removed from the channel region so that a portion of the nregion remains on the channel region to provide a reduction in a surface roughness of the channel region.