The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Dec. 10, 2002
Franz Schuler, Dresden, DE;
Georg Tempel, Dresden, DE;
Franz Schuler, Dresden, DE;
Georg Tempel, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The invention relates to a nonvolatile semiconductor memory cell and to an associated fabrication method, a source region (), a drain region () and a channel region lying in between being formed in a substrate (). In order to realize locally delimited memory locations (LB, RB), an electrically non-conductive charge storage layer () situated on a first insulation layer () is divided by an interruption (U), thereby preventing, in particular, a lateral charge transport between the memory locations (LB, RB) and significantly improving the charge retention properties.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile