The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Sep. 06, 2006
Tomonari Yamamoto, Kawasaki, JP;
Tomonari Yamamoto, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
After formation of a gate insulating film for a high voltage transistor on the entire surface, when removing the gate insulating film existing within a low voltage region, etching is not finished upon expose of an active region, but over etching is performed until the surface of an element isolation insulating film becomes lower by, for example, about 15 nm than the surface of the active region within the low voltage region. Then, a high-temperature rapid thermal hydrogen treatment is performed on the active region within the low voltage region. As a result of this, a natural oxide film is removed from the surface of the active region within the low voltage region, so that the flatness is increased and its corners are rounded.